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this is information on a product in full production. february 2014 docid023937 rev 5 1/18 18 stp13n60m2, stu13n60m2, STW13N60M2 n-channel 600 v, 0.35 typ., 11 a mdmesh ii plus? low q g power mosfets in to-220, ipak and to-247 packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. am15572v1 , tab to-220 1 2 3 tab 3 2 1 tab ipak 1 2 3 to-247 order codes v ds @ t jmax r ds(on) max i d stp13n60m2 650 v 0.38 11 a stu13n60m2 STW13N60M2 table 1. device summary order codes marking package packaging stp13n60m2 13n60m2 to-220 tube stu13n60m2 ipak STW13N60M2 to-247 www.st.com
contents stp13n60m2, stu13n60m2, STW13N60M2 2/18 docid023937 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
docid023937 rev 5 3/18 stp13n60m2, stu13n60m2, STW13N60M2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 11 a i d drain current (continuous) at t c = 100 c 7 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 44 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) 2. i sd 11 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit to-220 ipak to-247 r thj-case thermal resistance junction-case max 1.14 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2.8 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 125 mj
electrical characteristics stp13n60m2, stu13n60m2, STW13N60M2 4/18 docid023937 rev 5 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a 0.35 0.38 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 580 - pf c oss output capacitance - 32 - pf c rss reverse transfer capacitance -1.1-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 120 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.6 - q g total gate charge v dd = 480 v, i d = 11 a, v gs = 10 v (see figure 17 ) -17-nc q gs gate-source charge - 2.5 - nc q gd gate-drain charge - 9 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 5.5 a, r g = 4.7 , v gs = 10 v (see figure 16 and 21 ) -11-ns t r rise time - 10 - ns t d(off) turn-off delay time - 41 - ns t f fall time - 9.5 - ns
docid023937 rev 5 5/18 stp13n60m2, stu13n60m2, STW13N60M2 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 11 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 44 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 11 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/ s v dd = 60 v (see figure 18 ) -297 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 18.5 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/ s v dd = 60 v, t j =150 c (see figure 18 ) -394 ns q rr reverse recovery charge - 3.8 c i rrm reverse recovery current - 19 a
electrical characteristics stp13n60m2, stu13n60m2, STW13N60M2 6/18 docid023937 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 and to-247 figure 3. thermal impedance for to-220 and to-247 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.1 tj=150c tc=25c single pulse 100 s 10s am15710v1 figure 4. safe operating area for ipak figure 5. thermal impedance for ipak i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 0.1 tj=150c tc=25c single pulse 100 s 10s am15711v1 figure 6. output characteristics figure 7. transfer characteristics i d 12 8 4 0 0 8 v ds (v) (a) 4 12 16 4v 5v 6v v gs =7, 8, 9, 10v 16 20 am15712v1 i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =18v 16 20 am15713v1
docid023937 rev 5 7/18 stp13n60m2, stu13n60m2, STW13N60M2 electrical characteristics figure 8. normalized v (br)dss vs temperature figure 9. static drain-source on-resistance figure 10. gate charge vs gate-source voltage figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v (br)dss -50 t j (c) (norm) 0 0.9 0.94 0.98 1.02 1.06 i d =1 ma 50 100 1.1 am15714v1 r ds(on) 0.360 0.350 0.340 0.330 0 4 i d (a) ( ) 2 6 0.370 8 10 v gs =10v am15715v1 v gs 6 4 2 0 0 q g (nc) (v) 8 8 4 10 v dd =480v 300 200 100 0 400 v ds 12 16 500 v ds (v) i d =11a am15716v1 c 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 1000 am15717v1 v gs(th) 0.9 0.8 0.7 0.6 t j (c) (norm) -50 1.0 i d =250a 0 50 100 1.1 am15718v1 r ds(on) 2.1 1.7 1.3 0.9 t j (c) (norm) 0.5 -50 0 50 100 i d =5.5 a v gs =10v am15719v1
electrical characteristics stp13n60m2, stu13n60m2, STW13N60M2 8/18 docid023937 rev 5 figure 14. source-drain diode forward characteristics figure 15. output capacitance stored energy v sd 0 4 i sd (a) (v) 2 10 6 8 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 1 am15720v1 eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 4 300 400 am15721v1
docid023937 rev 5 9/18 stp13n60m2, stu13n60m2, STW13N60M2 test circuits 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data stp13n60m2, stu13n60m2, STW13N60M2 10/18 docid023937 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023937 rev 5 11/18 stp13n60m2, stu13n60m2, STW13N60M2 package mechanical data figure 22. to-220 type a drawing bw\sh$b5hyb7
package mechanical data stp13n60m2, stu13n60m2, STW13N60M2 12/18 docid023937 rev 5 table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid023937 rev 5 13/18 stp13n60m2, stu13n60m2, STW13N60M2 package mechanical data figure 23. ipak (to-251) drawing 0068771_k
package mechanical data stp13n60m2, stu13n60m2, STW13N60M2 14/18 docid023937 rev 5 table 10. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
docid023937 rev 5 15/18 stp13n60m2, stu13n60m2, STW13N60M2 package mechanical data figure 24. to-247 drawing 0075325_g
package mechanical data stp13n60m2, stu13n60m2, STW13N60M2 16/18 docid023937 rev 5 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
docid023937 rev 5 17/18 stp13n60m2, stu13n60m2, STW13N60M2 revision history 5 revision history table 12. document revision history date revision changes 18-dec-2012 1 first release. 11-apr-2013 2 ? added: note 3 in table 2 ? modified: i d value on table 2 , i ar , i as on table 4 , r ds(on) on table 5 ? updated: typical values for table 6 , 7 and 8 ? modified: figure 1 ? the part number std13n60m2 has been moved to a separate datasheet ? added: section 2.1: electrical characteristics (curves) 17-apr-2013 3 ? modified: r thj-case value on table 3 , t rr , q rr values, and t rr for t j = 150 c on table 8 ? minor text changes 28-jun-2013 4 ? document status promoted from preliminary data to production data ? minor text changes 28-feb-2014 5 ? updated: figure 22 and table 9 ? minor text changes
stp13n60m2, stu13n60m2, STW13N60M2 18/18 docid023937 rev 5 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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